skip to main content

SciTech ConnectSciTech Connect

Title: Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al{sub 2}O{sub 3} quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al{sub 2}O{sub 3} single crystal. It is established that, in the band gap of an Al{sub 2}O{sub 3} nanoparticle, a band of exciton states (formed from spatially separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al{sub 2}O{sub 3} nanoparticles at room temperature from the absorption spectrum of the nanosystem.
Authors:
 [1] ; ;  [2]
  1. National Academy of Sciences of Ukraine, Chuiko Institute of Surface Chemistry (Ukraine)
  2. Russian Academy of Sciences, Institute of Automation and Control Processes, Far East Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469724
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTRA; ALUMINIUM OXIDES; BINDING ENERGY; COMPARATIVE EVALUATIONS; ELECTRONS; EXCITONS; GROUND STATES; HOLES; INTERFACES; MONOCRYSTALS; NANOPARTICLES; QUANTUM DOTS; TEMPERATURE RANGE 0273-0400 K