skip to main content

SciTech ConnectSciTech Connect

Title: Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

It is shown that it is possible to considerably increase the lifetime of holes (τ ≈ 10{sup 3} s) in silicon with multicharged nanoclusters of manganese atoms. It is established that the long lifetime of holes (τ ≈ 10{sup 0}–10{sup 3} s) is practically retained right up to T = 250 K. Such materials can be used in the development of more effective photoelements and photodetectors of infrared (IR) radiation.
Authors:
; ; ;  [1]
  1. Tashkent State Technical University (Uzbekistan)
Publication Date:
OSTI Identifier:
22469722
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC CLUSTERS; ATOMS; HOLES; INFRARED RADIATION; LIFETIME; MANGANESE; NANOSTRUCTURES; PHOTODETECTORS; SILICON; TEMPERATURE DEPENDENCE