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Title: Radiation hardness of n-GaN schottky diodes

Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ; ; ;  [2] ;  [4]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Nitride Crystals Group (Russian Federation)
  3. Nitride Crystals Inc. (United States)
  4. St. Petersburg State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22469720
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRONS; FILMS; GALLIUM NITRIDES; HYDRIDES; IRRADIATION; MEV RANGE; PROTONS; RADIATION DOSES; RADIATION HARDNESS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SUBSTRATES; VAPOR PHASE EPITAXY