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Title: Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

The fabrication of photodetectors for the wavelength range of communications λ = 1.3–1.55 µm on the basis of Ge/Si(001) heterostructures with thick (∼0.5 µm) Ge layers grown by the hot-wire technique at reduced growth temperatures (350°C) is reported. The single-crystal Ga layers are distinguished by a low density of threading dislocations (∼10{sup 5} cm{sup –2}). The photodetectors exhibit a rather high quantum efficiency (∼0.05 at λ = 1.5 µm and 300 K) at moderate reverse saturation current densities (∼10{sup –2} A cm{sup –2}). Thus, it is shown that the hot-wire technique offers promise for the formation of integrated photodetectors for the wavelength range of communications, especially in the case of limitations on the conditions of heat treatments.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Nizhny Novgorod State University, Lobachevsky Physical Technical Research Institute (Russian Federation)
  2. Lobachevsky Nizhny Novgorod State University (Russian Federation)
  3. Sedakov Research Institute of Measuring Systems (Russian Federation)
  4. Nizhny Novgorod State University, Research and Education Center “Physics and Solid-State Microstructures” (Russian Federation)
Publication Date:
OSTI Identifier:
22469715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT DENSITY; DISLOCATIONS; FABRICATION; GALLIUM; GERMANIUM; HEAT TREATMENTS; LAYERS; MONOCRYSTALS; PHOTODETECTORS; QUANTUM EFFICIENCY; SILICON