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Title: Properties of AlN films deposited by reactive ion-plasma sputtering

The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.
Authors:
; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469713
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; COATINGS; CONCENTRATION RATIO; DIELECTRIC MATERIALS; ELLIPSOMETRY; FILMS; ILLUMINANCE; OXYGEN; PLASMA; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; SILICA; SILICON OXIDES; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY