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Title: Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.
Authors:
; ; ;  [1] ;  [2] ;  [1]
  1. Ioffe Institute (Russian Federation)
  2. Russian Academy of Sciences, Saint Petersburg National Research Academic University (Russian Federation)
Publication Date:
OSTI Identifier:
22469712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BRAGG REFLECTION; FABRICATION; GALLIUM ARSENIDES; LASER CAVITIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACES; TUNNEL EFFECT