Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures

Journal Article · Sun Nov 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615110032· OSTI ID:22469707

Kuznetzov, P. I.; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M.; Alkeev, N. V. ^[1]; Gladisheva, N. B. ^[2]

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1. Russian Academy of Sciences, Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation)
2. Pulsar State Plant (Russian Federation)

The detecting properties of periodic heterostructures with ZnCdS quantum wells separated by ZnMgS or ZnS barrier layers are studied. Heterostructures are grown on semi-insulating GaP substrates by metal organic vapor-phase epitaxy (MOVPE). On their basis, metal–semiconductor–metal (MSM) diodes with interdigital Schottky contacts 3 μm, distances between them of 3 μm, and a total detector area of 100 × 100 μm are fabricated. The detectors have low dark currents (10{sup –12} A); at low bias voltages, they provide a narrow- band response (full-width at half-maximum of FWHM = 18 nm at a wavelength of 350 nm) which is controlled by the ZnCdS quantum-well composition. As bias is increased to 70 V, the maximum detector sensitivity shifts by a wavelength of 450 nm, which is caused by penetration of the external-bias electric field into the semi-insulating GaP substrate. In this case, the narrow-band response of the detector at a wavelength of 350 nm is retained, i.e., the two-color detection of light is provided.

• OSTI ID: 22469707
• Journal Information: Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM SULFIDES
COLOR
DEPLETION LAYER
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
GALLIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
PERIODICITY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SENSITIVITY
SUBSTRATES
ULTRAVIOLET RADIATION
VAPOR PHASE EPITAXY
VISIBLE RADIATION
ZINC SULFIDES