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Title: Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.
Authors:
; ;  [1] ; ; ; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)
Publication Date:
OSTI Identifier:
22469706
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFERENCE; PERIODICITY; QUANTUM MECHANICS; QUANTUM WELLS; SPECTRAL REFLECTANCE