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Title: Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.
Authors:
; ; ;  [1]
  1. Institute for Physics of Microstructures of the Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22469705
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DOPED MATERIALS; GERMANIUM; LAYERS; MOLECULAR BEAM EPITAXY; SEGREGATION; SUBSTRATES; TEMPERATURE DEPENDENCE