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Title: Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells

The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel- coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations.
Authors:
; ; ;  [1] ; ;  [2]
  1. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469701
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTRA; ALUMINIUM ARSENIDES; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTRONS; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; KRAMERS-KRONIG CORRELATION; PHOTOLUMINESCENCE; QUANTIZATION; QUANTUM WELLS; REFRACTIVE INDEX; VISIBLE RADIATION