Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

Journal Article · Sun Nov 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261511010X· OSTI ID:22469700

Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

• OSTI ID: 22469700
• Journal Information: Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANTIMONIDES
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
DOPED MATERIALS
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
HALL EFFECT
HOLES
INDIUM ARSENIDES
INTERFACES
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
NONLINEAR PROBLEMS
N-TYPE CONDUCTORS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
SUBSTRATES