skip to main content

Title: On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.
Authors:
; ; ;  [1] ; ;  [2]
  1. Lobachevsky State University of Nizhny Novgorod, Physical-Technical Research Institute (Russian Federation)
  2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22469698
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; HETEROJUNCTIONS; LASER RADIATION; QUANTUM WELLS; SEMICONDUCTOR LASERS; SUBSTRATES; TUNNEL EFFECT; WAVEGUIDES