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Title: Spatial hole burning and spectral stability of a quantum-dot laser

The inhomogeneous intensity distribution of the optical model along the axis of a semiconductor quantum-dot laser results in spatial hole burning. The influence of this phenomenon on the stability of the multifrequency emission spectrum is studied when the optical transition of the quantum dots is characterized by considerable homogeneous broadening. The results of two models—in which inhomogeneous broadening is disregarded and taken into account—regarding the stability of the radiation spectrum under the influence of slight variation of the spectral loss dependence in the resonator are compared. Inhomogeneous distribution of the charge carriers (spatial hole burning) is found to be a critical factor in determining the form and stability of the spectrum.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Nanotechnology Center, St. Petersburg Academic University (Russian Federation)
Publication Date:
OSTI Identifier:
22469690
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; EMISSION SPECTRA; HOLES; LASERS; LOSSES; OPTICAL MODELS; QUANTUM DOTS; RESONATORS; SEMICONDUCTOR MATERIALS; STABILITY; VARIATIONS