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Title: Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

The design features of light-emitting-diode heterostructures with a monolithic InGaN/GaN active region containing several InGaN quantum wells (QWs) emitting at different wavelengths, grown by metal-organic chemical vapor deposition, are studied. It is shown that the number of emission bands can be raised to three by increasing the number of deposited InGaN QWs with different indium contents. The emission efficiency decreases by approximately 30% with increasing number of QWs at high currents. The dependences of the optical properties of the heterostructures on the number of QWs and types of barriers between the QWs (GaN layer or InGaN/GaN short-period superlattice) are analyzed. It is demonstrated that the ratio between the intensities of the emission lines widely varies with current flowing through the structure and greatly depends on the type and width of the barriers between the QWs.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. CEMES-CNRS–Université de Toulouse (France)
  3. STR Group–Soft-Impact OOO (Russian Federation)
Publication Date:
OSTI Identifier:
22469687
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; COLOR; CRYSTAL GROWTH; DIFFUSION BARRIERS; ELECTRIC CURRENTS; EMISSION; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; LIGHT EMITTING DIODES; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; SUPERLATTICES