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Title: Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.
Authors:
; ; ; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. ITMO University (Russian Federation)
Publication Date:
OSTI Identifier:
22469686
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CONCENTRATION RATIO; DISLOCATIONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY