Dynamics of carrier recombination in a semiconductor laser structure
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.
- OSTI ID:
- 22469684
- Journal Information:
- Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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