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Title: Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

Optical extinction in a metal–semiconductor metamaterial based on a AlGaAs matrix, which contains random arrays of AsSb plasmon nanoinclusions, is studied. The metamaterial is grown by molecular beam epitaxy at a low temperature. A system of nanoinclusions of various sizes is formed by annealing at temperatures 400, 500, and 600°C. Investigation of the sample’s microstructure by transmission electron microscopy shows that the average size of nanoinclusions at the used annealing temperatures is 4–7, 5–8, and 6–9 nm, respectively. It is shown experimentally that AsSb nanoparticle arrays in the AlGaAs matrix cause the resonant absorption of light. It is established that the plasmon-resonance parameters found in the metamaterial are almost independent of the sizes of the AsSb nanoinclusions. The plasmon-resonance energy is (1.47 ± 0.01) eV, while its full width at half maximum is (0.19 ± 0.01) eV.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469679
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ALUMINIUM ARSENIDES; ANNEALING; EV RANGE; GALLIUM ARSENIDES; MATRIX MATERIALS; METALS; METAMATERIALS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PLASMONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE RADIATION