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Title: Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

The systematic features of the inf luence of defect formation during the deposition of a cobalt contact on the optoelectronic characteristics of structures containing InAs/GaAs quantum dots and In{sub x}Ga{sub 1–x}As/GaAs quantum wells are studied. From analysis of the temperature dependences of the photosensitivity of the InAs/GaAs quantum-dot structures, the values of the resultant recombination lifetime of photoexcited charge carriers in quantum dots at different conditions of Co deposition and at different structural parameters are determined.
Authors:
 [1] ;  [2] ;  [1] ; ;  [3]
  1. Nizhny Novgorod State University, Physical–Technical Research Institute (Russian Federation)
  2. Nizhny Novgorod State University (Russian Federation)
  3. Nizhny Novgorod State University, Research Institute of Chemistry (Russian Federation)
Publication Date:
OSTI Identifier:
22469678
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; COBALT; DEPOSITION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIFETIME; PHOTOSENSITIVITY; QUANTUM DOTS; QUANTUM WELLS; RECOMBINATION; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY