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Title: Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  3. Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)
Publication Date:
OSTI Identifier:
22469675
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM COMPOUNDS; IMPURITIES; MERCURY TELLURIDES; PHOTOCONDUCTIVITY; SOLID SOLUTIONS; TELLURIDES