Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615120106· OSTI ID:22469675

Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M. ^[1]; Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A. ^[2]; Gavrilenko, V. I. ^[1]; Teppe, F. ^[3]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
3. Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

• OSTI ID: 22469675
• Journal Information: Semiconductors, Vol. 49, Issue 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
IMPURITIES
MERCURY TELLURIDES
PHOTOCONDUCTIVITY
SOLID SOLUTIONS
TELLURIDES