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Title: Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells

The exchange enhancement of the electron g-factor in perpendicular magnetic fields to 12 T in HgTe/CdHgTe quantum wells 20 nm wide with a semimetal band structure is studied. The electron effective mass and g-factor at the Fermi level are determined by analyzing the temperature dependence of the amplitude of Shubnikov–de Haas oscillation in weak fields and near odd Landau-level filling factors ν ≤ 9. The experimental values are compared with theoretical calculations performed in the one-electron approximation using the eight-band kp Hamiltonian. The found dependence of g-factor enhancement on the electron concentration is explained by changes in the contributions of hole- and electron-like states to exchange corrections to the Landau-level energies in the conduction band.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3] ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  3. Universite Montpellier II, Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS-TERALAB (France)
Publication Date:
OSTI Identifier:
22469672
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CORRECTIONS; EFFECTIVE MASS; ELECTRONS; FERMI LEVEL; HAMILTONIANS; HOLES; LANDE FACTOR; MAGNETIC FIELDS; MERCURY TELLURIDES; OSCILLATIONS; QUANTUM WELLS; SEMIMETALS; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS