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Title: Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er{sup 3+} ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data. For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469670
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EMISSION SPECTRA; ERBIUM; ERBIUM IONS; H CENTERS; ION IMPLANTATION; N-TYPE CONDUCTORS; OXYGEN; OXYGEN IONS; PHOTOLUMINESCENCE; QUENCHING; SILICON; TEMPERATURE DEPENDENCE