skip to main content

SciTech ConnectSciTech Connect

Title: Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stressmore » fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.« less
Authors:
; ;  [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469669
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANTIMONY; ARSENIC; CORRELATIONS; DEPLETION LAYER; ELECTRON MICROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; MATRIX MATERIALS; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; STRAINS; STRESSES; SURFACES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS