Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261512012X· OSTI ID:22469669

Bert, N. A.; Chaldyshev, V. V. ^[1]; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

• OSTI ID: 22469669
• Journal Information: Semiconductors, Vol. 49, Issue 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ANTIMONY
ARSENIC
CORRELATIONS
DEPLETION LAYER
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
INDIUM ARSENIDES
MATRIX MATERIALS
MOLECULAR BEAM EPITAXY
NUCLEATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
STRAINS
STRESSES
SURFACES
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS