Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels
Abstract
It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadily growing number of traps in the density-of-states tails of InGaN/GaN quantum wells become nonradiative recombination centers upon the approach of quasi-Fermi levels to the band edges. This follows from the correlation between the efficiency droop and the appearance of negative differential capacitance, observed in the study. The correlation appears due to slow trap recharging via the trap-assisted tunneling of electrons through the n-type barrier of the quantum well and to the inductive nature of the diode-current variation with forward bias.
- Authors:
- Publication Date:
- OSTI Identifier:
- 22469668
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CAPACITANCE; CORRELATIONS; DENSITY OF STATES; DIFFUSION BARRIERS; ELECTRONS; FERMI LEVEL; GALLIUM NITRIDES; HALL EFFECT; INDIUM COMPOUNDS; LIFETIME; LIGHT EMITTING DIODES; N-TYPE CONDUCTORS; QUANTUM WELLS; RECOMBINATION; TRAPS; TUNNEL EFFECT
Citation Formats
Bochkareva, N. I., Rebane, Yu. T., and Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru. Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels. United States: N. p., 2015.
Web. doi:10.1134/S1063782615120040.
Bochkareva, N. I., Rebane, Yu. T., & Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru. Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels. United States. https://doi.org/10.1134/S1063782615120040
Bochkareva, N. I., Rebane, Yu. T., and Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru. 2015.
"Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels". United States. https://doi.org/10.1134/S1063782615120040.
@article{osti_22469668,
title = {Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels},
author = {Bochkareva, N. I. and Rebane, Yu. T. and Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru},
abstractNote = {It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadily growing number of traps in the density-of-states tails of InGaN/GaN quantum wells become nonradiative recombination centers upon the approach of quasi-Fermi levels to the band edges. This follows from the correlation between the efficiency droop and the appearance of negative differential capacitance, observed in the study. The correlation appears due to slow trap recharging via the trap-assisted tunneling of electrons through the n-type barrier of the quantum well and to the inductive nature of the diode-current variation with forward bias.},
doi = {10.1134/S1063782615120040},
url = {https://www.osti.gov/biblio/22469668},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 49,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}