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Title: High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.
Authors:
; ; ; ;  [1]
  1. Lobachevsky Nizhny Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
22469667
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CURRENTS; ELECTRONS; FAST NEUTRONS; FISSION SPECTRA; NEUTRON FLUENCE; NEUTRON FLUX; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SPACE CHARGE; STABILIZATION