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Title: Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469666
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; ENERGY SPECTRA; HALL EFFECT; MAGNETIC FIELDS; MAGNETORESISTANCE; MERCURY; MERCURY TELLURIDES; PHASE TRANSFORMATIONS; QUANTUM WELLS; TEMPERATURE DEPENDENCE