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Title: Universal properties of materials with the Dirac dispersion relation of low-energy excitations

The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical to experimentally observed values. The spectral properties of surface electronic states in Weyl semimetals are also studied. The density of surface states is accurately determined. The universal behavior of these characteristics is a distinctive feature of the considered Dirac materials which can be used in practical applications.
Authors:
 [1] ;  [2]
  1. Russian Academy of Sciences, Institute for Applied Physics (Russian Federation)
  2. Universidad del Pais Vasco, Departamento de Fisica de Materiales (Spain)
Publication Date:
OSTI Identifier:
22469665
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; DENSITY OF STATES; DIELECTRIC MATERIALS; DISPERSION RELATIONS; ELECTRONIC STRUCTURE; ENERGY LEVELS; EXCITATION; SEMIMETALS; SURFACES; TWO-DIMENSIONAL SYSTEMS