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Title: Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. National Research University of Electronic Technology “MIET” (Russian Federation)
  2. Universität Göttingen, IV Physikalisches Institut (Germany)
  3. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469659
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALS; DISLOCATIONS; ELECTRON MICROSCOPY; EPITAXY; GALLIUM ARSENIDES; LAYERS; SUBSTRATES; SURFACES