Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615130102· OSTI ID:22469659

Borgardt, N. I. ^[1]; Seibt, M. ^[2]; Kazakov, I. P.; Tsikunov, A. V. ^[3]

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1. National Research University of Electronic Technology “MIET” (Russian Federation)
2. Universität Göttingen, IV Physikalisches Institut (Germany)
3. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

• OSTI ID: 22469659
• Journal Information: Semiconductors, Vol. 49, Issue 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTALS
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
LAYERS
SUBSTRATES
SURFACES