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Title: Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.
Authors:
;  [1] ;  [2] ;  [1]
  1. “Technological Center” Research-and-Production Company (Russian Federation)
  2. Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation)
Publication Date:
OSTI Identifier:
22469658
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ASPECT RATIO; CARBON NANOTUBES; CATHODES; EFFICIENCY; FIELD EMISSION; HEAT SINKS; PLASMA; SILICON