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Title: Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

Abstract

New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

Authors:
;  [1];  [2]
  1. “Technological Center” Research-and-Production Company (Russian Federation)
  2. Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation)
Publication Date:
OSTI Identifier:
22469658
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ASPECT RATIO; CARBON NANOTUBES; CATHODES; EFFICIENCY; FIELD EMISSION; HEAT SINKS; PLASMA; SILICON

Citation Formats

Galperin, V. A., Kitsyuk, E. P., Pavlov, A. A., and Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures. United States: N. p., 2015. Web. doi:10.1134/S1063782615130072.
Galperin, V. A., Kitsyuk, E. P., Pavlov, A. A., & Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures. United States. https://doi.org/10.1134/S1063782615130072
Galperin, V. A., Kitsyuk, E. P., Pavlov, A. A., and Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru. 2015. "Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures". United States. https://doi.org/10.1134/S1063782615130072.
@article{osti_22469658,
title = {Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures},
author = {Galperin, V. A. and Kitsyuk, E. P. and Pavlov, A. A. and Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru},
abstractNote = {New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.},
doi = {10.1134/S1063782615130072},
url = {https://www.osti.gov/biblio/22469658}, journal = {Semiconductors},
issn = {1063-7826},
number = 13,
volume = 49,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}