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Title: Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer

The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.
Authors:
; ; ; ; ;  [1]
  1. Nizhny Novgorod State University, Research Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469632
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; CURIE POINT; DOPED MATERIALS; ELECTROLUMINESCENCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; LAYERS; LIGHT EMITTING DIODES; MANGANESE; POLARIZATION; SPIN