Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
- Nizhny Novgorod State University, Research Physical–Technical Institute (Russian Federation)
The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.
- OSTI ID:
- 22469632
- Journal Information:
- Semiconductors, Vol. 50, Issue 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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