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Title: Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source

The prospects of β voltaics as electric-power sources for semiconductor circuits are considered. Experimental studies show that charging of the surface and a decrease in the electrovoltaic power are important. Simulation of the β-voltaic effect induced by electrons from a nickel-63 source on silicon pin structures is performed; it is shown that the coefficient of the collection of generated charge carriers can be as high as 13%. The dose dependences of the performance efficiency of silicon β-voltaic structures are determined for the case of irradiation with α particles and γ-ray photons; it is shown that 1.3 × 10{sup 14} and 10{sup 20} cm{sup –2}, respectively, are the threshold doses, above which a rapid decrease in efficiency occurs. The optimal parameters of microchannel structures in β-voltaic electronics, in which the width of the channels and the distance between them correspond to 3 and 10 μm, are determined.
Authors:
 [1] ;  [2]
  1. Togliatti State University (Russian Federation)
  2. National Research Technological University “MISiS” (Russian Federation)
Publication Date:
OSTI Identifier:
22469631
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALPHA PARTICLES; BETAVOLTAIC CELLS; CHARGE CARRIERS; EFFICIENCY; ELECTRIC POWER; ELECTRONS; GAMMA RADIATION; IRRADIATION; NICKEL 63; PHOTONS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; THRESHOLD DOSE