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Title: Optical properties of PbS thin films

The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E{sub 1} = 3.53 eV and E{sub 2} = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (αhν){sup 2} on the photon energy hν, the band gap is established at E{sub g} = 0.37 eV.
Authors:
;  [1] ; ; ; ;  [2]
  1. National Academy of Azerbaijan, Nakhichevan Branch (Azerbaijan)
  2. National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)
Publication Date:
OSTI Identifier:
22469627
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; DIELECTRIC MATERIALS; ELLIPSOMETRY; ENERGY DEPENDENCE; ENERGY GAP; EV RANGE; LEAD SULFIDES; OPTICAL PROPERTIES; PERMITTIVITY; PHOTONS; RAMAN SPECTRA; THIN FILMS