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Title: Growth, structure, and properties of GaAs-based (GaAs){sub 1–x–y}(Ge{sub 2}){sub x}(ZnSe){sub y} epitaxial films

The possibility of growing the (GaAs){sub 1–x–y}(Ge{sub 2}){sub x}(ZnSe){sub y} alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is a{sub f} = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence I = I{sub 0}exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ∼ V{sup α}, where the exponent α varies with increasing voltage at high voltages (V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
Authors:
 [1] ; ;  [2] ;  [3] ;  [2] ;  [3] ;  [1]
  1. Babur Andizhan State University (Uzbekistan)
  2. Starodubtsev Physical–Technical Institute (Uzbekistan)
  3. Academy of Sciences of the Republic of Uzbekistan, Institute of Nuclear Physics (Uzbekistan)
Publication Date:
OSTI Identifier:
22469625
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; FILMS; GALLIUM ARSENIDES; GERMANIUM SELENIDES; LATTICE PARAMETERS; LIQUID PHASE EPITAXY; MONOCRYSTALS; PHOTOSENSITIVITY; RECOMBINATION; SUBSTRATES; SULFIDE MINERALS; X-RAY DIFFRACTION; ZINC SELENIDES