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Title: Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [2]
  1. St. Petersburg State Electrotechnical University LETI (Russian Federation)
  2. Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)
  3. Ascatron AB (Sweden)
Publication Date:
OSTI Identifier:
22469621
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; EPITAXY; INTERFACES; ION IMPLANTATION; LAYERS; OXYGEN; PHOSPHORUS; PHOSPHORUS IONS; SILICA; SILICON CARBIDES; SILICON OXIDES; SURFACES