Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Journal Article · Fri Jan 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616010152· OSTI ID:22469621

Afanasyev, A. V.; Ilyin, V. A.; Luchinin, V. V. ^[1]; Sledziewski, T. ^[2]; Reshanov, S. A.; Schöner, A. ^[3]; Krieger, M. ^[2]

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1. St. Petersburg State Electrotechnical University LETI (Russian Federation)
2. Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)
3. Ascatron AB (Sweden)

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

• OSTI ID: 22469621
• Journal Information: Semiconductors, Vol. 50, Issue 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
EPITAXY
INTERFACES
ION IMPLANTATION
LAYERS
OXYGEN
PHOSPHORUS
PHOSPHORUS IONS
SILICA
SILICON CARBIDES
SILICON OXIDES
SURFACES