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Title: Photodetectors based on CuInS{sub 2}

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.
Authors:
;  [1] ;  [2]
  1. Ulyanovsk State University (Russian Federation)
  2. National Research University of Electronic Technology “MIET” (Russian Federation)
Publication Date:
OSTI Identifier:
22469620
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CHARGE CARRIERS; CONCENTRATION RATIO; CONVERSION; COPPER SULFIDES; EFFICIENCY; ELECTRIC CONDUCTIVITY; ENERGY GAP; EV RANGE; INDIUM SULFIDES; PHOTODETECTORS; RECOMBINATION; TUNNEL EFFECT; VISIBLE RADIATION