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Title: Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm{sup 2}.
Authors:
; ; ; ; ; ; ;  [1]
  1. R and D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22454481
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; CURRENT DENSITY; DEPLETION LAYER; DISTRIBUTION; EFFICIENCY; ELECTRONS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM WELLS