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Title: Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO{sub 2} films on silicon

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO{sub 2} films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO{sub 2} film is much stronger than that from the counterpart with the 450 °C-annealed CeO{sub 2} film. This is due to that the 550 °C-annealed CeO{sub 2} film contains more Ce{sup 3+} ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f{sup 1} energy band pertaining to Ce{sup 3+} ions leads to the UV-Vis EL.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22454468
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CERIUM IONS; CERIUM OXIDES; ELECTROLUMINESCENCE; ENERGY LEVELS; FILMS; OXYGEN; SEMICONDUCTOR DEVICES; SILICON