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Title: Investigation of CuGaSe{sub 2}/CuInSe{sub 2} double heterojunction interfaces grown by molecular beam epitaxy

In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe{sub 2}/CnInSe{sub 2}/CuGaSe{sub 2} grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3] ; ;  [1] ;  [4]
  1. School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555 (Japan)
  2. (Malaysia)
  3. CREST, JST, 4-1-8, Honcho Kawaguchi, Saitama, 332-0012 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22454452
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION