Phonon scattering limited performance of monolayer MoS{sub 2} and WSe{sub 2} n-MOSFET
- School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah-711103 (India)
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore-560012 (India)
In this paper we show the effect of electron-phonon scattering on the performance of monolayer (1L) MoS{sub 2} and WSe{sub 2} channel based n-MOSFETs. Electronic properties of the channel materials are evaluated using the local density approximation (LDA) in density functional theory (DFT). For phonon dispersion we employ the small displacement / frozen phonon calculations in DFT. Thereafter using the non-equilibrium Green’s function (NEGF) formalism, we study the effect of electron-phonon scattering and the contribution of various phonon modes on the performance of such devices. It is found that the performance of the WSe{sub 2} device is less impacted by phonon scattering, showing a ballisticity of 83% for 1L-WSe{sub 2} FET for channel length of 10 nm. Though 1L-MoS{sub 2} FET of similar dimension shows a lesser ballisticity of 75%. Also in the presence of scattering there exist a a 21–36% increase in the intrinsic delay time (τ) and a 10–18% reduction in peak transconductance (g{sub m}) for WSe{sub 2} and MoS{sub 2} devices respectively.
- OSTI ID:
- 22454440
- Journal Information:
- AIP Advances, Vol. 5, Issue 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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