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Title: Local doping of graphene devices by selective hydrogen adsorption

N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (V{sub G}) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the V{sub G}-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.
Authors:
;  [1] ; ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics and Astronomy and Department of Nano Science and Technology, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)
  3. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
  4. Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22454423
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; EQUIPMENT; FIELD EFFECT TRANSISTORS; GRAPHENE; HYDROGEN; PMMA; P-N JUNCTIONS