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Title: Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InO{sub x}-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InO{sub x} thin-film transistors (TFTs) are higher than 8 cm{sup 2}/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InO{sub x} TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InO{sub x}/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
  2. (Japan)
  3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22454422
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DENSITY; ELECTRIC POTENTIAL; HAFNIUM; INDIUM OXIDES; INTERFACES; LAYERS; MOBILITY; STABILITY; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; TRANSISTORS