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Title: Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics

We report the photochemical atomic layer deposition of Al{sub 2}O{sub 3} thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al{sub 2}O{sub 3} films exhibit dielectric constants of 8 – 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD.
Authors:
; ; ; ; ;  [1]
  1. Centre for Materials and Structures, University of Liverpool, Liverpool, L69 3GH (United Kingdom)
Publication Date:
OSTI Identifier:
22454421
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM OXIDES; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; IRRADIATION; MAGNESIUM FLUORIDES; OXYGEN; PERMITTIVITY; SHUTTERS; SUBSTRATES; THIN FILMS