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Title: Lateral carrier confinement in InGaN quantum-well nanorods

We review our studies on lateral carrier diffusion in micro-fabricated samples of InGaN nanorods and their parent quantum wells. The carrier diffusion is observed to be strongly confined in nanorods, as manifested by the reduction in the delayed-rise component of time-resolved photoluminescence traces. We further argue that the confinement of carrier diffusion can be applied to suppress the efficiency droop related to defect state recombination and to assist in the energy transfer between InGaN nanorods and nanocrystal phosphors for color conversion.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093 (China)
  2. (United States)
Publication Date:
OSTI Identifier:
22451190
Resource Type:
Journal Article
Resource Relation:
Journal Name: Annals of Physics; Journal Volume: 358; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NANOSTRUCTURES; NITROGEN COMPOUNDS; PHOSPHORS; PHOTOLUMINESCENCE; SPECTROSCOPY