Lateral carrier confinement in InGaN quantum-well nanorods

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Annals of Physics

DOI:https://doi.org/10.1016/J.AOP.2015.04.012· OSTI ID:22451190

Shi, Chentian ^[1]; Zhang, Chunfeng ^[1]; Wang, Xiaoyong ^[1]; Xiao, Min ^[1]

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1. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093 (China)

We review our studies on lateral carrier diffusion in micro-fabricated samples of InGaN nanorods and their parent quantum wells. The carrier diffusion is observed to be strongly confined in nanorods, as manifested by the reduction in the delayed-rise component of time-resolved photoluminescence traces. We further argue that the confinement of carrier diffusion can be applied to suppress the efficiency droop related to defect state recombination and to assist in the energy transfer between InGaN nanorods and nanocrystal phosphors for color conversion.

• OSTI ID: 22451190
• Journal Information: Annals of Physics, Vol. 358; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-4916
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
NANOSTRUCTURES
NITROGEN COMPOUNDS
PHOSPHORS
PHOTOLUMINESCENCE
SPECTROSCOPY