skip to main content

SciTech ConnectSciTech Connect

Title: The U{sup 5+} compound Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24}: Synthesis, structure, and electronic properties

Black crystals of Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24} have been made by direct combination of BaS, Ag, U, and S at 1273 K. This compound crystallizes in a new structure type in the space group C{sub 4v}{sup 10}−I4cm of the tetragonal system with four formula units in a cell with lattice constants a=13.9189(6) Å and c=23.7641(11) Å (V=4604(5) Å{sup 3}). Multiphoton Luminescence Spectroscopy measurements are consistent with the noncentrosymmetric nature of the structure. In the structure each U atom is octahedrally coordinated by six S atoms, whereas three of the five crystallographically independent Ag atoms are tetrahedrally coordinated to four S atoms, another has a seesaw coordination to four S atoms, and the last has a triangular coordination to three S atoms. The overall structure consists of the three-dimensional stacking of the US{sub 6}, AgS{sub 4}, and AgS{sub 3} polyhedra to leave channels in which Ba atoms reside. Based on the values of the U–S interatomic distances, the compound Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24} contains U{sup 5+} and charge balance is achieved with the formal oxidation states of 9 Ba{sup 2+}, 10 Ag{sup 1+}, 4 U{sup 5+} and 24 S{sup 2−}. DFT calculations predict an antiferromagnetic ground state and amore » band gap of 2.1 eV. Resistivity measurements indicate that the compound is a semiconductor with a complex activation mechanism and activation energies ranging from 0.03(1) eV to 0.08(1) eV. - Graphical abstract: General view of the Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24} structure. - Highlights: • Black crystals of Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24} have been made by direct combination of BaS, Ag, U, and S at 1273 K. • Ba{sub 9}Ag{sub 10}U{sub 4}S{sub 24} contains U{sup 5+} and charge balance is achieved with 9 Ba{sup 2+}, 10 Ag{sup 1+}, 4 U{sup 5+}, and 24 S{sup 2−}. • DFT calculations predict an antiferromagnetic ground state and a band gap of 2.1 eV. • The compound is a semiconductor with activation energies ranging from 0.03(1) eV to 0.08(1) eV.« less
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [4] ;  [1]
  1. Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States)
  2. (France)
  3. Laboratoire de Cristallographie, Résonance Magnétique, et Modélisations CRM2 (UMR UHP-CNRS 7036), Faculté des Sciences et Techniques, Université de Lorraine, BP 70239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy Cedex (France)
  4. Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3112 (United States)
Publication Date:
OSTI Identifier:
22443525
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Solid State Chemistry; Journal Volume: 221; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ACTIVATION ENERGY; ANTIFERROMAGNETISM; BARIUM SULFIDES; GROUND STATES; INTERATOMIC DISTANCES; LATTICE PARAMETERS; LUMINESCENCE; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SPACE GROUPS; SPECTROSCOPY; SYNTHESIS; URANIUM IONS; X RADIATION