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Title: Graded band gap GaInNAs solar cells

Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22423755
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ELECTRONIC STRUCTURE; EV RANGE 01-10; GALLIUM COMPOUNDS; GRADED BAND GAPS; INDIUM COMPOUNDS; MEV RANGE 10-100; NEAR INFRARED RADIATION; NITROGEN COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SPECTRAL RESPONSE