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Title: Double-gate SnO{sub 2} nanowire electric-double-layer transistors with tunable threshold voltage

Double-gate Sb-SnO{sub 2} nanowire electric-double-layer (EDL) transistors with in-plane gates were fabricated using only one shadow mask. The threshold voltage of such devices can be tuned in a wide range from −0.13 V to 0.72 V by the in-plane gate, which allows the device to switch from depletion-mode to enhancement-mode operation. The operation voltage of the double-gate device is 1 V because the EDL gate dielectric can lead to a high gate capacitance (>3.5 μF/cm{sup 2}). Moreover, all double-gate devices show good electrical characteristics with high field-effect mobility (>200 cm{sup 2}/V·s), high drain-current I{sub on/off} ratio (>7 × 10{sup 4}), and small subthreshold slope (<100 mV/dec). These double-gate nanowire EDL transistors can pave the way for an electrically working low-voltage nano-electronic process.
Authors:
 [1]
  1. Faculty of Communication and Electronics, Jiangxi Science and Technology Normal University, Nanchang, 330013 (China)
Publication Date:
OSTI Identifier:
22423754
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONY; CARRIER MOBILITY; ELECTRICAL PROPERTIES; NANOWIRES; TIN OXIDES; TRANSISTORS