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Title: Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

Nanowire growth on heteroepitaxial GaP/Si(111) by metalorganic vapor phase epitaxy requires the [-1-1-1] face, i.e., GaP(111) material with B-type polarity. Low-energy electron diffraction (LEED) allows us to identify the polarity of GaP grown on Si(111), since (2×2) and (1×1) surface reconstructions are associated with GaP(111)A and GaP(111)B, respectively. In dependence on the pre-growth treatment of the Si(111) substrates, we were able to control the polarity of the GaP buffers. GaP films grown on the H-terminated Si(111) surface exhibited A-type polarity, while GaP grown on Si surfaces terminated with arsenic exhibited a (1×1) LEED pattern, indicating B-type polarity. We obtained vertical GaAs nanowire growth on heteroepitaxial GaP with (1×1) surface reconstruction only, in agreement with growth experiments on homoepitaxially grown GaP(111)
Authors:
; ; ; ;  [1] ; ; ;  [1] ;  [2] ;  [3]
  1. Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany)
  2. (Germany)
  3. Center for Semiconductor Technology and Optoelectronics (ZHO), University of Duisburg-Essen, 47057 Duisburg (Germany)
Publication Date:
OSTI Identifier:
22423749
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ARSENIC; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; NANOWIRES; SILICON; SUBSTRATES; SURFACES; VAPOR PHASE EPITAXY