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Title: Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. National Institute of Materials Physics, P.O. Box MG-7, Bucharest, Magurele 077125 (Romania)
  2. Faculty of Physics, University of Bucharest, Atomistilor Street 103, Magurele, Ilfov 77125 (Romania)
Publication Date:
OSTI Identifier:
22423747
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ASPECT RATIO; COPPER OXIDES; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; GOLD; NANOWIRES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TITANIUM